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Lithography

Spinner/Hotplate

Manual coating of resist
Maximum speed:6000 RPM
Maximum hot plate temperature:300 °C with 0.1 °C resolution
Hot plate temperature uniformity:± 0.3 % across working surface
Three bake modes:proximity, vacuum, and contact
Substrate size:200 mm diameter wafers down to small pieces

Laser Pattern Generator

For substrate patterning of features as small as 700 nm
For patterning chrome on glass photomasks and for maskless direct substrate writing
Standard processes include photomask patterning for use in both contact and stepper lithography
Minimum feature size:700 nm
Write speed:110 mm2 / min.
Address grid:20 nm.
Allowed data formats:DXF, GDS-II, CIF, and Gerber
Alignment system for exposing patterns on existing structures
Maximum wafer diameter:200 mm (8 in)
Maximum substrate thickness:7 mm
Small pieces supported:Yes
Photomask blank sizes provided:125 mm (5 inch) and 150 mm (6 inch)

Contact aligner

Exposure methods:flood, proximity, soft, hard, low vacuum and vacuum contacts
Illumination area:150 mm diameter
Resolution:1 µm
Overlay accuracy:= 500 nm
Front and back side pattern alignment

High throughput i-line Stepper

5X reduction of photomask patterns
Resolution:280 nm
Overlay accuracy:40 nm
3D backside alignment
Substrate size:200 mm diameter wafers down to small pieces
Throughput = 84 wafers per hour

E-beam lithography

Accelerating voltage:100 keV
Spot size:2 nm
Scan rate:50 MHz
DAC resolution:19 bit
Write field:0.5 mm (4th lens)
Stitching accuracy:< 20 nm
Overlay accuracy:< 20 nm
Substrate size:200 mm diameter wafers down to small pieces