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Dry Etch

ICP Etcher(Cl-based)

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz
Radio frequency (RF) power source: up to 600 W at 13.56 MHz
Electrode temperature range: -150 °C to 300 °C
Unique process gases: chlorine, boron trichloride, hydrogen bromide, silicon tetrachloride, methane, and hydrogen
Controlled profile GaAs etching
High-temperature InP etching
Substrate size: 200 mm diameter wafers down to small pieces.

ICP Etcher (F-based)

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz
Radio frequency (RF) power source: up to 600 W at 13.56 MHz
Electrode temperature range: -150 °C to 300 °C
Unique process gases: hexafluoroethane (C2F6), octafluorocyclobutane (C4F8), trifluormethane (CHF3), and hydrogen
Anisotropic etching of silicon and silicon oxide
Low temperature silicon etching
Substrate size: 200 mm diameter wafers down to small pieces

Deep Silicon Etcher

Silicon etch rate: up to 30 µm / min
Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz
Radio Frequency (RF) power source: up to 500 W at 13.56 MHz
Substrate size: 200 mm diameter wafers down to small pieces
Etch selectivity:
Silicon to silicon oxide = 100 to 1
Silicon to photoresist: = 50 to 1

Xenon Difuoride Silicon Etcher

Etch selectivity:
Silicon to silicon dioxide: = 100 to 1
Silicon to silicon nitride: = 100 to 1
Silicon to photoresist: = 60 to 1
Unique gases: xenon difluoride
Substrate size: 150 mm diameter wafers down to small pieces