Aluminum Nitride Sputtering System
A designated high speed aluminum nitride deposition system with load lock
Capable of making highly C-axis oriented (FWHM < 2 degree) and low stress films
Substrate size: 4″ wafers only
Sputtering System
Five targets, RF or DC, 5″ or 75 mm
Up to five substrates, 1″ 2″ and 3″ wafers
Programmable substrate positioning
Variable target-substrate distance
8″ cryo pump
500 W DC power supplies, 600 W RF power supplies, substrate bias
Secondary sputtering gas available
DC and RF Sputter System
Loadlock reduces contamination and allows fast cycle times
Turbo-pumped vacuum chamber has a base vacuum of 2.6 x 10-5 Pa (2 x 10-7 Torr)
Rotating stage for high uniformity deposition of thin films
Stage temperature range: 25 °C to 350 °C
600 W DC and RF power supplies
Two RF and two DC guns
One DC gun is magnetically enhanced for ferromagnetic materials
Touch screen user interface; layers can be programmed sequentially
Co-sputtering capability from one RF and one DC gun
Argon bombardment can be used to remove native oxide from wafers
Substrate size: 150 mm diameter wafers down to small pieces
Cluster Sputtering Deposition System
Transfer robot and cassette elevators reduce contamination and allow fast cycle times
24/7 unattended operation
Cryo-pumped process modules have a base vacuum of 2.6 x 10-6 Pa (2 x 10-8 Torr)
Rotating stage for high uniformity deposition of thin films
Uniformity: 2 % (1 sigma)
Stage temperature range: 20 °C
Quartz crystal thickness monitor
Residual gas analyzer
Ion guns for wafer pre-clean
Oxygen and nitrogen available for reactive sputtering
Substrate size: 200 mm diameter wafers down to small pieces
12 fixed sputtering targets:
Chrome
Gold
Nickel
Titanium
Platinum
Tantalum
Aluminum.
Cobalt
Silicon dioxide
Indium tin oxide
Titanium oxide
Tantalum oxide
Electron Beam Evaporator
Cryogenically pumped chamber has a base vacuum of 1.0 x 10-5 Pa (8 x 10-8 Torr)
Rotating planetary substrate holder provides uniform film deposition
Rotating planetary substrate holder capacity: 4 whole wafers or piece carriers
Six source electron gun evaporation
Fully automatic or manual operation
Multilayer deposition
Over 25 deposition sources provided including most common metals and dielectrics
Substrate size: 150 mm diameter wafers down to small pieces
Ion gun with selectable gases:
Argon for oxide removal prior to deposition
Oxygen for ion assisted deposition of dielectrics
PECVD
8″ chuck
Substrate heater (375°C max)
Deposits SiO2 and SixNy
LPCVD
Low pressure chemical vapor deposition (LPCVD) with three vacuum tubes
Automatic recipe controller
Maximum Temperature: Silicon nitride, 850 °C; all others, 650 °C
Maximum Deposition Thickness: 5 µm
Substrate size: 150 mm diameter wafers down to small pieces
Standard processes:
Stoichiometric and low stress silicon nitride
Doped and undoped polysilicon
Low temperature oxide depositions
HDPCVD
High density plasma chemical vapor deposition (HDPCVD) system for high quality, pinhole-free films that are comparable to high temperature furnace deposited films. Maximum radio frequency (RF) bias power: 600 W
Maximum inductively coupled plasma power (ICP): 2000 W
Maximum substrate temperature: 180 °C
Film thicknesses ranging from a few nanometers to several micrometers
Substrate size: 200 mm diameter wafers down to small pieces
Processes supported:
Silicon dioxide
Silicon nitride
Amorphous silicon
ALD
Precisely controlled ultrathin and pinhole free film coating
Film thicknesses ranging from one atomic layer to several nanometers
Maximum temperature: 800 °C
Maximum radio frequency (RF) power: 600 W
Substrate size: 200 mm diameter wafers down to small pieces
Standard deposition processes:
Silicon dioxide
Hafnium oxide
Aluminum oxide
Aluminum nitride
Platinum