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光刻

Spinner/Hotplate 甩胶机/热板

Manual coating of resist

Maximum speed:6000 RPM

Maximum hot plate temperature:300 °C with 0.1 °C resolution

Hot plate temperature uniformity:± 0.3 % across working surface

Three bake modes:proximity, vacuum, and contact

Substrate size:200 mm diameter wafers down to small pieces

Laser Pattern Generator 激光图案生成器(制版)

For substrate patterning of features as small as 700 nm

For patterning chrome on glass photomasks and for maskless direct substrate writing

Standard processes include photomask patterning for use in both contact and stepper lithography

Minimum feature size:700 nm

Write speed:110 mm2 / min.

Address grid:20 nm.

Allowed data formats:DXF, GDS-II, CIF, and Gerber

Alignment system for exposing patterns on existing structures

Maximum wafer diameter:200 mm (8 in)

Maximum substrate thickness:7 mm

Small pieces supported:Yes

Photomask blank sizes provided:125 mm (5 inch) and 150 mm (6 inch)

Contact aligner 接触式曝光机

Exposure methods:flood, proximity, soft, hard, low vacuum and vacuum contacts

Illumination area:150 mm diameter

Resolution:1 µm

Overlay accuracy:= 500 nm

Front and back side pattern alignment

High throughput i-line Stepper 高吞吐率i-line步进机

5X reduction of photomask patterns

Resolution:280 nm

Overlay accuracy:40 nm

3D backside alignment

Substrate size:200 mm diameter wafers down to small pieces

Throughput = 84 wafers per hour

E-beam lithography 电子束光刻

Accelerating voltage:100 keV

Spot size:2 nm

Scan rate:50 MHz

DAC resolution:19 bit

Write field:0.5 mm (4th lens)

Stitching accuracy:< 20 nm

Overlay accuracy:< 20 nm

Substrate size:200 mm diameter wafers down to small pieces