Aluminum Nitride Sputtering System AlN溅射机
● A designated high speed aluminum nitride deposition system with load lock
● Capable of making highly C-axis oriented (FWHM < 2 degree) and low stress films
● Substrate size: 4″ wafers only
Sputtering System 溅射机
● Five targets, RF or DC, 5″ or 75 mm
● Up to five substrates, 1″ 2″ and 3″ wafers
● Programmable substrate positioning
● Variable target-substrate distance
● 8″ cryo pump
● 500 W DC power supplies, 600 W RF power supplies, substrate bias
● Secondary sputtering gas available
DC and RF Sputter System 直流与射频溅射系统
● Loadlock reduces contamination and allows fast cycle times
● Turbo-pumped vacuum chamber has a base vacuum of 2.6 x 10-5 Pa (2 x 10-7 Torr)
● Rotating stage for high uniformity deposition of thin films
● Stage temperature range: 25 °C to 350 °C
● 600 W DC and RF power supplies
● Two RF and two DC guns
● One DC gun is magnetically enhanced for ferromagnetic materials
● Touch screen user interface; layers can be programmed sequentially
● Co-sputtering capability from one RF and one DC gun
● Argon bombardment can be used to remove native oxide from wafers
● Substrate size: 150 mm diameter wafers down to small pieces
Cluster Sputtering Deposition System 集群溅射沉积系统
● Transfer robot and cassette elevators reduce contamination and allow fast cycle times
● 24/7 unattended operation
● Cryo-pumped process modules have a base vacuum of 2.6 x 10-6 Pa (2 x 10-8 Torr)
● Rotating stage for high uniformity deposition of thin films
● Uniformity: 2 % (1 sigma)
● Stage temperature range: 20 °C
● Quartz crystal thickness monitor
● Residual gas analyzer
● Ion guns for wafer pre-clean
● Oxygen and nitrogen available for reactive sputtering
● Substrate size: 200 mm diameter wafers down to small pieces
● 12 fixed sputtering targets： Chrome、Gold、Nickel、Titanium、 Platinum、Tantalum、Aluminum、Cobalt、Silicon dioxide、Indium tin oxide、Titanium oxide、Tantalum oxide
Electron Beam Evaporator 电子束镀膜机
● Cryogenically pumped chamber has a base vacuum of 1.0 x 10-5 Pa (8 x 10-8 Torr)
● Rotating planetary substrate holder provides uniform film deposition
● Rotating planetary substrate holder capacity: 4 whole wafers or piece carriers
● Six source electron gun evaporation
● Fully automatic or manual operation
● Multilayer deposition
● Over 25 deposition sources provided including most common metals and dielectrics
● Substrate size: 150 mm diameter wafers down to small pieces
● Ion gun with selectable gases：
1）Argon for oxide removal prior to deposition；
2）Oxygen for ion assisted deposition of dielectrics；
PECVD
● 8″ chuck
● Substrate heater (375°C max)
● Deposits SiO2 and SixNy
LPCVD
● Low pressure chemical vapor deposition (LPCVD) with three vacuum tubes
● Automatic recipe controller
● Maximum Temperature: Silicon nitride, 850 °C; all others, 650 °C
● Maximum Deposition Thickness: 5 µm
● Substrate size: 150 mm diameter wafers down to small pieces
● Standard processes:
1）Stoichiometric and low stress silicon nitride;
2）Doped and undoped polysilicon;Low temperature oxide depositions;
HDPCVD
● High density plasma chemical vapor deposition (HDPCVD) system for high quality, pinhole-free films that are comparable to high temperature furnace deposited films.
● Maximum radio frequency (RF) bias power: 600 W
● Maximum inductively coupled plasma power (ICP): 2000 W
● Maximum substrate temperature: 180 °C
● Film thicknesses ranging from a few nanometers to several micrometers
● Substrate size: 200 mm diameter wafers down to small pieces
● Processes supported: Silicon dioxide；Silicon nitride；Amorphous silicon；
ALD
● Precisely controlled ultrathin and pinhole free film coating
● Film thicknesses ranging from one atomic layer to several nanometers
● Maximum temperature: 800 °C
● Maximum radio frequency (RF) power: 600 W
● Substrate size: 200 mm diameter wafers down to small pieces
● Standard deposition processes：Silicon dioxide；Hafnium oxide；Aluminum oxide；Aluminum nitride；Platinum；