Spinner/Hotplate 甩胶机/热板

● Manual coating of resist

● Maximum speed：6000 RPM

● Maximum hot plate temperature：300 °C with 0.1 °C resolution

● Hot plate temperature uniformity：± 0.3 % across working surface

● Three bake modes：proximity, vacuum, and contact

● Substrate size：200 mm diameter wafers down to small pieces

Laser Pattern Generator 激光图案生成器（制版）

● For substrate patterning of features as small as 700 nm

● For patterning chrome on glass photomasks and for maskless direct substrate writing

● Standard processes include photomask patterning for use in both contact and stepper lithography

● Minimum feature size：700 nm

● Write speed：110 mm2 / min.

● Address grid：20 nm.

● Allowed data formats：DXF, GDS-II, CIF, and Gerber

● Alignment system for exposing patterns on existing structures

● Maximum wafer diameter：200 mm (8 in)

● Maximum substrate thickness：7 mm

● Small pieces supported：Yes

● Photomask blank sizes provided：125 mm (5 inch) and 150 mm (6 inch)

Contact aligner 接触式曝光机

● Exposure methods：flood, proximity, soft, hard, low vacuum and vacuum contacts

● Illumination area：150 mm diameter

● Resolution：1 µm

● Overlay accuracy：= 500 nm

● Front and back side pattern alignment

High throughput i-line Stepper 高吞吐率i-line步进机

● 5X reduction of photomask patterns

● Resolution：280 nm

● Overlay accuracy：40 nm

● 3D backside alignment

● Substrate size：200 mm diameter wafers down to small pieces

● Throughput = 84 wafers per hour

E-beam lithography 电子束光刻

● Accelerating voltage：100 keV

● Spot size：2 nm

● Scan rate：50 MHz

● DAC resolution：19 bit

● Write field：0.5 mm (4th lens)

● Stitching accuracy：< 20 nm

● Overlay accuracy：< 20 nm

● Substrate size：200 mm diameter wafers down to small pieces