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薄膜沉积

Aluminum Nitride Sputtering System AlN溅射机

A designated high speed aluminum nitride deposition system with load lock

Capable of making highly C-axis oriented (FWHM < 2 degree) and low stress films

Substrate size: 4″ wafers only

Sputtering System 溅射机

Five targets, RF or DC, 5″ or 75 mm

Up to five substrates, 1″ 2″ and 3″ wafers

Programmable substrate positioning

Variable target-substrate distance

8″ cryo pump

500 W DC power supplies, 600 W RF power supplies, substrate bias

Secondary sputtering gas available

DC and RF Sputter System 直流与射频溅射系统

Loadlock reduces contamination and allows fast cycle times

Turbo-pumped vacuum chamber has a base vacuum of 2.6 x 10-5 Pa (2 x 10-7 Torr)

Rotating stage for high uniformity deposition of thin films

Stage temperature range: 25 °C to 350 °C

600 W DC and RF power supplies

Two RF and two DC guns

One DC gun is magnetically enhanced for ferromagnetic materials

Touch screen user interface; layers can be programmed sequentially

Co-sputtering capability from one RF and one DC gun

Argon bombardment can be used to remove native oxide from wafers

Substrate size: 150 mm diameter wafers down to small pieces

Cluster Sputtering Deposition System 集群溅射沉积系统

Transfer robot and cassette elevators reduce contamination and allow fast cycle times

24/7 unattended operation

Cryo-pumped process modules have a base vacuum of 2.6 x 10-6 Pa (2 x 10-8 Torr)

Rotating stage for high uniformity deposition of thin films

Uniformity: 2 % (1 sigma)

Stage temperature range: 20 °C

Quartz crystal thickness monitor

Residual gas analyzer

Ion guns for wafer pre-clean

Oxygen and nitrogen available for reactive sputtering

Substrate size: 200 mm diameter wafers down to small pieces

12 fixed sputtering targets: Chrome、Gold、Nickel、Titanium、 Platinum、Tantalum、Aluminum、Cobalt、Silicon dioxide、Indium tin oxide、Titanium oxide、Tantalum oxide

Electron Beam Evaporator 电子束镀膜机

Cryogenically pumped chamber has a base vacuum of 1.0 x 10-5 Pa (8 x 10-8 Torr)

Rotating planetary substrate holder provides uniform film deposition

Rotating planetary substrate holder capacity: 4 whole wafers or piece carriers

Six source electron gun evaporation

Fully automatic or manual operation

Multilayer deposition

Over 25 deposition sources provided including most common metals and dielectrics

Substrate size: 150 mm diameter wafers down to small pieces

Ion gun with selectable gases:

1)Argon for oxide removal prior to deposition;

2)Oxygen for ion assisted deposition of dielectrics;

PECVD

8″ chuck

Substrate heater (375°C max)

Deposits SiO2 and SixNy

LPCVD

Low pressure chemical vapor deposition (LPCVD) with three vacuum tubes

Automatic recipe controller

Maximum Temperature: Silicon nitride, 850 °C; all others, 650 °C

Maximum Deposition Thickness: 5 µm

Substrate size: 150 mm diameter wafers down to small pieces

Standard processes:

1)Stoichiometric and low stress silicon nitride;

2)Doped and undoped polysilicon;Low temperature oxide depositions;

HDPCVD

High density plasma chemical vapor deposition (HDPCVD) system for high quality, pinhole-free films that are comparable to high temperature furnace deposited films.

Maximum radio frequency (RF) bias power: 600 W

Maximum inductively coupled plasma power (ICP): 2000 W

Maximum substrate temperature: 180 °C

Film thicknesses ranging from a few nanometers to several micrometers

Substrate size: 200 mm diameter wafers down to small pieces

Processes supported: Silicon dioxide;Silicon nitride;Amorphous silicon;

ALD

Precisely controlled ultrathin and pinhole free film coating

Film thicknesses ranging from one atomic layer to several nanometers

Maximum temperature: 800 °C

Maximum radio frequency (RF) power: 600 W

Substrate size: 200 mm diameter wafers down to small pieces

Standard deposition processes:Silicon dioxide;Hafnium oxide;Aluminum oxide;Aluminum nitride;Platinum;



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