ICP Etcher(Cl-based)氯基ICP刻蚀机

● Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz

● Radio frequency (RF) power source: up to 600 W at 13.56 MHz

● Electrode temperature range: -150 °C to 300 °C

● Unique process gases:chlorine, boron trichloride,hydrogen bromide, silicon tetrachloride,methane,and hydrogen

● Controlled profile GaAs etching

● High-temperature InP etching

● Substrate size: 200 mm diameter wafers down to small pieces.

ICP Etcher (F-based)氟基ICP刻蚀机

● Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz

● Radio frequency (RF) power source: up to 600 W at 13.56 MHz

● Electrode temperature range: -150 °C to 300 °C

● Unique process gases:hexafluoroethane (C2F6),octafluorocyclobutane (C4F8),trifluormethane(CHF3),and hydrogen

● Anisotropic etching of silicon and silicon oxide

● Low temperature silicon etching

● Substrate size: 200 mm diameter wafers down to small pieces

Deep Silicon Etcher深硅刻蚀机

● Silicon etch rate: up to 30 µm / min

● Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz

● Radio Frequency (RF) power source: up to 500 W at 13.56 MHz

● Substrate size: 200 mm diameter wafers down to small pieces

● Etch selectivity:Silicon to silicon oxide =100 to 1；Silicon to photoresist =50 to 1；

Xenon Difuoride Silicon Etcher二氟化氙硅刻蚀机

● Etch selectivity：Silicon to silicon dioxide=100 to 1；Silicon to silicon nitride=100 to 1；Silicon to photoresist=60 to 1；

● Unique gases: xenon difluoride

● Substrate size: 150 mm diameter wafers down to small pieces