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干法刻蚀

ICP Etcher(Cl-based)氯基ICP刻蚀机

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz

Radio frequency (RF) power source: up to 600 W at 13.56 MHz

Electrode temperature range: -150 °C to 300 °C

Unique process gases:chlorine, boron trichloride,hydrogen bromide, silicon tetrachloride,methane,and hydrogen

Controlled profile GaAs etching

High-temperature InP etching

Substrate size: 200 mm diameter wafers down to small pieces.

ICP Etcher (F-based)氟基ICP刻蚀机

Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz

Radio frequency (RF) power source: up to 600 W at 13.56 MHz

Electrode temperature range: -150 °C to 300 °C

Unique process gases:hexafluoroethane (C2F6),octafluorocyclobutane (C4F8),trifluormethane(CHF3),and hydrogen

Anisotropic etching of silicon and silicon oxide

Low temperature silicon etching

Substrate size: 200 mm diameter wafers down to small pieces

Deep Silicon Etcher深硅刻蚀机

Silicon etch rate: up to 30 µm / min

Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz

Radio Frequency (RF) power source: up to 500 W at 13.56 MHz

Substrate size: 200 mm diameter wafers down to small pieces

Etch selectivity:Silicon to silicon oxide =100 to 1;Silicon to photoresist =50 to 1;

Xenon Difuoride Silicon Etcher二氟化氙硅刻蚀机

Etch selectivity:Silicon to silicon dioxide=100 to 1;Silicon to silicon nitride=100 to 1;Silicon to photoresist=60 to 1;

Unique gases: xenon difluoride

Substrate size: 150 mm diameter wafers down to small pieces